PART |
Description |
Maker |
TIP131 |
Complemetary Silicon Power Darlington Transistors(互补硅功率达林顿晶体
|
意法半导
|
2SC4672 |
NPN Silicon Epitaxial Silicon Tra nsistor
|
SeCoS Halbleitertechnologie GmbH
|
MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
|
NTE5864 NTE5889 NTE5865 |
Silicon power rectifier diode. Anode to case. Peak reverse voltage 200V. Max forward current 30A. Silicon Power Rectifier Diode, 25 Amp Silicon Power Rectifier Diode 25 Amp Silicon Power Rectifier Diode / 25 Amp
|
NTE[NTE Electronics]
|
PMD11K80 PMD11K PMD11K100 PMD11K60 PMD10K80 PMD10K |
Silicon Power Darlington Transistors SILICON POWER DARLING TRANSISTORSl 12 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3
|
Central Semiconductor C... CENTRAL[Central Semiconductor Corp] Central Semiconductor Corp. Central Semiconductor, Corp.
|
1N2439 1N1399 1N3296 1N2431 1N2433 1N2434 1N2435 R |
Silicon Power Rectifier 125 A, 400 V, SILICON, RECTIFIER DIODE, DO-205AA Silicon Power Rectifier 125 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AA Silicon Power Rectifier 100 A, 300 V, SILICON, RECTIFIER DIODE, DO-205AA Silicon Power Rectifier 100 A, 200 V, SILICON, RECTIFIER DIODE, DO-205AA Silicon Power Rectifier
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
BD438 ON0195 BD442 BD440 |
RH Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 05V; Power: 1W; Safety standards and approval: EN POWER TRANSISTORS PNP SILICON From old datasheet system 4.0 AMPERES POWER TRANSISTORS Plastic Medium Power Silicon PNP Transistor
|
Motorola Inc ONSEMI[ON Semiconductor] MOTOROLA[Motorola, Inc]
|
2N5655 2N5656 2N5657 |
Power 1A 350V NPN POWER TRANSISTORS NPN SILICON Plastic NPN Silicon High-Voltage Power Transistor
|
ONSEMI[ON Semiconductor]
|
NE5531079A-T1 NE5531079A-T1-A NE5531079A-T1A-A |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS SILICON POWER MOS FET
|
California Eastern Labs
|
NTE5811 NTE5891 NTE5810 NTE5870 NTE5890 NTE5874 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A. 12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4 Silicon Power Rectifier Diode / 12 Amp Silicon Power Rectifier Diode 12 Amp Silicon Power Rectifier Diode, 12 Amp Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.
|
NTE[NTE Electronics]
|